Titre :

Thermal characterization of Ge-rich GST thin films for phase change memories by Raman thermometry

Auteur(s) :

Patil, Akash [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Le-Friec, Yannick [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Roussel, Pascal [Auteur]
Unité de Catalyse et Chimie du Solide - UMR 8181 [UCCS]
Deblock, Yves [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jeannot, Simon [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Boivin, Philippe [Auteur]
STMicroelectronics [Rousset] [ST-ROUSSET]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Robillard, Jean-François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Titre de la revue :

Journal of Applied Physics

Éditeur :

American Institute of Physics

Date de publication :

2024-11-01

ISSN :

0021-8979

Mot(s)-clé(s) en anglais :

CrossMark

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

<div><p>Doped GeSbTe (GST)-based phase change materials are of growing interest due to their ability to enable high-temperature data retention for embedded memory applications. This functionality is achieved through Ge ...
Lire la suite ><div><p>Doped GeSbTe (GST)-based phase change materials are of growing interest due to their ability to enable high-temperature data retention for embedded memory applications. This functionality is achieved through Ge enrichment and addition of dopants such as N and C in stoichiometries such as GST-225, which improve the crystallization temperature and thermal phase stability. In this study, we examine the effect of these dopants on thermal conductivity using Raman thermometry. We report the temperature-dependent thermal conductivity of the amorphous and crystalline phases of Ge-rich GeSbTe (GGST) and Ge-rich GeSbTe N-doped (GGSTN) thin films. The results reveal a surprising temperature dependence of the thermal conductivity of the crystalline phase of GGST and GGSTN, a phenomenon not typically observed for GST-based materials. Additionally, enrichment of Ge and subsequent N-doping result in reduced thermal conductivity, which can benefit the power consumption of phase change memories. From a characterization perspective, Raman thermometry has been developed as a technique for simultaneous structural and thermal characterization of GST-based materials.</p></div>Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Projet Européen :

ECSEL Joint Undertaking (JU) under Grant Agreement No. 101007321.

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Date de dépôt :

2024-11-07T06:24:03Z