Title :

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

Author(s) :

Grandpierron, François [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Carneiro, Elodie [Auteur]
EasyGaN
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Ben-Hammou, Lyes [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Moon, Jeong-Sun [Auteur]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]

Journal title :

Micromachines

Publisher :

MDPI

Publication date :

2024-11-08

ISSN :

2072-666X

English keyword(s) :

AlGaN graded channel HEMT transconductance linearity simulations
AlGaN graded channel
HEMT
transconductance
linearity
simulations

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

<div><p>Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In ...
Show more ><div><p>Graded AlGaN channel High-Electron Mobility Transistor (HEMT) technology is emerging as a strong candidate for millimeter-wave applications, as superior efficiency and linearity performances can be achieved. In this paper, graded channel AlGaN/GaN HEMTs are investigated with the aim of further understanding the benefit of the graded AlGaN channel compared to more conventional GaN channel HEMTs. Our study employed a comprehensive simulation workflow including an extensive calibration of direct current (DC), S-parameter, large signal, and linearity characteristics at 30 GHz. Through device modeling and implementation of circuit-level simulation using Advanced Design System (ADS, 2023) software, both linearity and large signal performances could be mimicked remarkably. In agreement with previous studies, the results show that graded channel technology allows for a modified electron confinement leading to a 3D electron gas (3DEG). Consequently, the electric field peak inside of the channel is reduced without degrading the radio frequency (RF) performance, as the electron velocity is improved, thus offering a more linear transconductance and better linearity performances. As a result, for graded AlGaN channel HEMTs, a 6 dB output power back-off from peak power-added efficiency (PAE) is needed to achieve a carrier with a third-order intermodulation (C/IM3) ratio of 30 dBc against 9 dB for conventional AlGaN/GaN HEMTs with a lower associated PAE.</p></div>Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Vertical GaN for High Voltage

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL