Title :

Charge transport systems with Fermi-Dirac statistics for memristors

Author(s) :

Herda, Maxime [Auteur]
Reliable numerical approximations of dissipative systems [RAPSODI]
Laboratoire Paul Painlevé - UMR 8524 [LPP]
Jüngel, Ansgar [Auteur]
Institute of Analysis and Scientific Computing [Wien]
Portisch, Stefan [Auteur]
Institute of Analysis and Scientific Computing [Wien]

English keyword(s) :

Drift-diffusion equations
Fermi-Dirac statistics
Blakemore statistics
global existence
bounded weak solutions
memristors
semiconductors
neuromorphic computing

HAL domain(s) :

Mathématiques [math]/Equations aux dérivées partielles [math.AP]

English abstract : [en]

An instationary drift--diffusion system for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet--Neumann boundary ...
Show more >An instationary drift--diffusion system for the electron, hole, and oxygen vacancy densities, coupled to the Poisson equation for the electric potential, is analyzed in a bounded domain with mixed Dirichlet--Neumann boundary conditions. The electron and hole densities are governed by Fermi--Dirac statistics, while the oxygen vacancy density is governed by Blakemore statistics. The equations model the charge carrier dynamics in memristive devices used in semiconductor technology. The global existence of weak solutions is proved in up to three space dimensions. The proof is based on the free energy inequality, an iteration argument to improve the integrability of the densities, and estimations of the Fermi--Dirac integral. Under a physically realistic elliptic regularity condition, it is proved that the densities are bounded.Show less >

Language :

Anglais

ANR Project :

Centre Européen pour les Mathématiques, la Physique et leurs Interactions

Collections :

• Laboratoire Paul Painlevé - UMR 8524

Source :

Harvested from HAL