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Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 10-2022, 69; 10, 5530-5535Compte-rendu et recension critique d'ouvrage -
Short term reliability and robustness of ultra-thin barrier, 110 nm-gate AlN/GaN HEMTs
Microelectronics Reliability, Elsevier, 08-2021, 123, 114199Compte-rendu et recension critique d'ouvragefulltext