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Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's"
IEEE Transactions on Electron Devices; IEEE Transaction on Electron devices, Institute of Electrical and Electronics Engineers, 09-1996, 43; 9, 1473-1477Compte-rendu et recension critique d'ouvrage -
Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 08-1996, 43; 8, 1251-1255Compte-rendu et recension critique d'ouvrage