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Dual role of 3C-SiC interlayer on DC and RF isolation of GaN/Si-based devices
Applied Physics Letters, American Institute of Physics, 19-09-2022, 121; 12, 122103Compte-rendu et recension critique d'ouvrage -
[Invited] High power-added-efficiency millimeter-wave GaN HEMTs[Invited]
GaN marathon 2022, Venice, 20-06-2022, 2022