Recherche
Résultats 1-10 de 92
-
Molecular dynamics simulation of the recrystallization of amorphous Si layers: Comprehensive study of the dependence of the recrystallization velocity on the interatomic potential
Journal of Applied Physics, American Institute of Physics, 19-06-2007, 101; 12, 123506Compte-rendu et recension critique d'ouvragetexte intégral -
Multiple parallel conduction paths observed in depth-profiled n-GaN epilayers
Journal of Applied Physics, American Institute of Physics, 2002, 91; 12, 9835Compte-rendu et recension critique d'ouvrage -
Low electron mobility of field-effect transistor determined by modulated magnetoresistance
Journal of Applied Physics, American Institute of Physics, 2007, 102; 10, 103701.1Compte-rendu et recension critique d'ouvragetexte intégral -
Self-heating and trapping effects in AlGaN/GaN heterojunction field-effect transistors
Journal of Applied Physics, American Institute of Physics, 2009, 106, 054511-1-7Compte-rendu et recension critique d'ouvragetexte intégral -
Defect modes in one-dimensional anisotropic photonic crystal
Journal of Applied Physics, American Institute of Physics, 2009, 106; 11, 113107Compte-rendu et recension critique d'ouvragetexte intégral -
Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors (MOSFETs)
Journal of Applied Physics, American Institute of Physics, 2004, 96, 729-737Compte-rendu et recension critique d'ouvragetexte intégral -
Modeling of electron-electron scattering in Monte Carlo simulation of quantum cascade lasers
Journal of Applied Physics, American Institute of Physics, 2005, 97, 043702Compte-rendu et recension critique d'ouvragetexte intégral -
Model for ferroelectric semiconductors thin films accounting for the space varying permittivity
Journal of Applied Physics, American Institute of Physics, 2005, 97, 024104Compte-rendu et recension critique d'ouvragetexte intégral -
Morphology-dependent electrical transport in textured ultra-thin Al films on Si
Journal of Applied Physics, American Institute of Physics, 2005, 98, 026103Compte-rendu et recension critique d'ouvragetexte intégral -
Electrotunable band gaps of one- and two-dimensional photonic crystal structures based on silicon and liquid crystals
Journal of Applied Physics, American Institute of Physics, 2008, 104, 063108-1-7Compte-rendu et recension critique d'ouvragetexte intégral