Title :

Molecular beam epitaxial growth of hexagonal boron nitride on Ni foils

Author(s) :

Hadid, Jawad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Colambo, Ivy [Auteur]
Boyaval, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nuns, Nicolas [Auteur]
Institut Michel Eugène Chevreul - FR 2638 [IMEC]
Dudin, Pavel [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Avila, Jose [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vignaud, Dominique [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

2D Materials

Pages :

045007

Publisher :

IOP Publishing

Publication date :

2021-07-15

ISSN :

2053-1583

English keyword(s) :

hexagonal boron nitride
molecular beam epitaxy
photoemission spectroscopy

HAL domain(s) :

Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Hexagonal boron nitride was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N 3 H 6) as precursor. Our photoemission analysis shows that several components of boron and nitrogen are ...
Show more >Hexagonal boron nitride was synthesized by molecular beam epitaxy on polycrystalline Ni foils using borazine (B 3 N 3 H 6) as precursor. Our photoemission analysis shows that several components of boron and nitrogen are detected, suggesting the complex nature of the bonds noticeably at the h-BN/Ni interface. The BN thickness was estimated by photoemission and the BN distribution by ToF-SIMS. Due to the catalytic effect of the Ni substrate, this thickness is self-limited in the range 1-2 layers regardless of the borazine dose. A spatially resolved photoemission study was carried out before and after transfer of the h-BN on a Si substrate. It shows that a strong electronic coupling exists at the interface between h-BN and polycrystalline Ni, not only for (111) grains, which disappears after transfer on Si. In addition, we highlight the importance of detecting π plasmons in the photoemission spectra to confirm the hexagonal nature of boron nitride.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

hBN/Graphene 2D Heterostructures: from scalable growth to integration

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL