Title :

RF characterization and small signal extraction on 22 nm CMOS fully-depleted SOI technology

Author(s) :

Kane, Ousmane [Auteur correspondant]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Lucci, Luca [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Scheiblin, Pascal [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Lepilliet, sl [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Danneville, François [Auteur]
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)

City :

Grenoble

Country :

France

Start date of the conference :

2019-04-01

Publisher :

IEEE

Publication date :

2019

English keyword(s) :

FDSOI
CMOS
RF
millimeter waves (mmW)
Small signal circuit
Contacted-Poly-Pitch (CPP)

HAL domain(s) :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

the drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits for millimeter wave applications. In this ...
Show more >the drastic downscaling of the transistor size along with advances in material sciences allowed the development of low power CMOS technologies with competitive RF figure of merits for millimeter wave applications. In this context, this paper presents the RF characterization (up to 50 GHz) of an advanced 22nm UTBB FDSOI technology developed by Globalfoundries. In addition to the DC performances with a DC transconductance of 1.6 S/mm, this technology presents promising RF characteristics with a F-t/F-max above 330 GHz. Also, it is shown that the device's gate finger width can be decreased down to 0.3 mu m without RF performance degradation. Furthermore, the relaxed contacted poly pitch is shown to have favorable impact on F-maxShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL