Title :

Advantages of ALD over evaporation deposition for high-K materials integration in high power capacitive RF MEMS

Author(s) :

Croizier, Guillaume [Auteur]
Thales Research and Technology [Palaiseau]
Martins, Paolo [Auteur]
Thales Research and Technology [Palaiseau]
Le Bailiff, M. [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Bansropun, S. [Auteur]
Thales Research and Technology [Palaiseau]
Fryziel, Michel [Auteur]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rolland, Nathalie [Auteur]
Circuits Systèmes Applications des Micro-ondes - IEMN [CSAM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ziaei, Afshin [Auteur]
Thales Research and Technology [Palaiseau]

Conference title :

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

City :

Kaohsiung

Country :

Taïwan

Start date of the conference :

2017-06-18

Book title :

19th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers)

Journal title :

Proceedings of 19th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS 2017

Publisher :

IEEE

Publication date :

2017

English keyword(s) :

ALD
Evaporation
High-K
RF MEMS

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique ...
Show more >We report a study over a wide range of high-K dielectric materials (AlxOy, HfOx, TiOx.) deposited by different techniques (Evaporation, ALD, PEALD ... ) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction. Furthermore ALD materials are promising to meet high power requirements for capacitive RF MEMS switches. As a result, Thermal ALD HfO2 was integrated in high power capacitive RF MEMS switches in order to improve their RF performances, power handling and reliability.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL