Titre :

Toward a better understanding of the doping mechanism involved in Mo(tfd-COCF3)(3) doped PBDTTT-c

Auteur(s) :

Euvrard, J. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Revaux, A. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Nobre, S. S. [Auteur]
Département des Technologies des Nouveaux Matériaux (Ex Département des Technologies des NanoMatériaux) [DTNM ]
Kahn, A. [Auteur]
Princeton University
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]

Titre de la revue :

Journal of Applied Physics

Pagination :

22550

Éditeur :

American Institute of Physics

Date de publication :

2018

ISSN :

0021-8979

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

In this study, we aim to improve our understanding of the doping mechanism involved in the polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene- ...
Lire la suite >In this study, we aim to improve our understanding of the doping mechanism involved in the polymer poly[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b')dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene-)-2-6-diyl)] (PBDTTT-c) doped with tris[1-(trifluoroethanoyl)-2-(trifluoromethyl)ethane-1,2-dithiolene] [Mo(tfd-COCF3)(3)]. We follow the evolution of the hole density with dopant concentration to highlight the limits of organic semiconductor doping. To enable the use of doping to enhance the performance of organic electronic devices, doping efficiency must be understood and improved. We report here a study using complementary optical and electrical characterization techniques, which sheds some light on the origin of this limited doping efficiency at a high dopant concentration. Two doping mechanisms are considered, the direct charge transfer and the charge transfer complex. We discuss the validity of the model involved as well as its impact on the doping efficiency. Published by AIP Publishing.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL