Titre :

Piezoresistance in nano-silicon

Auteur(s) :

Rowe, Alistair [Auteur]
École polytechnique [X]
Arscott, Steve [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mccallum, Jeffrey [Auteur]
University of Melbourne
Johnson, Brett [Auteur]
University of Melbourne
Lew, Christopher [Auteur]
University of Melbourne
Li, Heng [Auteur]
École polytechnique [X]
Thayil, Abel [Auteur]
École polytechnique [X]
Filoche, Marcel [Auteur]
École polytechnique [X]

Titre de la manifestation scientifique :

APS March Meeting 2021

Ville :

Virtual

Pays :

Etats-Unis d'Amérique

Date de début de la manifestation scientifique :

2021-03-15

Discipline(s) HAL :

Sciences de l'ingénieur [physics]
Physique [physics]/Matière Condensée [cond-mat]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

Piezoresistance (PZR) in nano-silicon has long promised to provide a means to sensitively transduce motion in nano-electromechanical systems. Giant or anomalous effects loosely ascribed ...
Lire la suite >Piezoresistance (PZR) in nano-silicon has long promised to provide a means to sensitively transduce motion in nano-electromechanical systems. Giant or anomalous effects loosely ascribed tomechanically sensitive electronic defects have been reported in lightly doped nano-objects. On the basis of two recent works [1, 2] a quantitative description of the piezoresponse of trap-mediated, space-charge-limited transport will be given. Using silicon nano-membranes containing both native and engineered defects, it will be shown that under steady-state conditions the magnitude of the piezoresistance is always comparable to that of charge-neutral, bulk silicon although a sign change can be induced under bipolar conditions due to stress-induced shifts in the trap activation energies. Under non-steady-state conditions, this same shift in trap activation energies can yield a giant piezoresponse at measurement frequencies close to the characteristic trapping rates. In terms of possible nano-sensing applications, the difficulties likely to be encountered when trying to exploit this giant piezo-impedance will be discussed.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL