Title :

Ultrafast quantum-well photodetectors operating at 10µm with flat frequency response up to 70GHz at room temperature

Author(s) :

Hakl, M [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lin, Q [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, sl [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Billet, M [Auteur]
Universiteit Gent = Ghent University = Université de Gand [UGENT]
Lampin, Jean-Francois [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pirotta, S [Auteur]
Centre National de la Recherche Scientifique [CNRS]
Colombelli, R [Auteur]
Centre National de la Recherche Scientifique [CNRS]
Wan, W [Auteur]
Cao, J [Auteur]
Li, H [Auteur]
Peytavit, Emilien [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Barbieri, Stefano [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

ACS Photonics

Pages :

464-471

Publisher :

American Chemical Society

Publication date :

2021-02-17

ISSN :

2330-4022

English keyword(s) :

mid-infrared
quantum-well photodetector
intersubband transitions
infrared antenna
heterodyne detection
broadband

HAL domain(s) :

Sciences de l'ingénieur [physics]/Optique / photonique
Sciences de l'ingénieur [physics]
Physique [physics]/Physique [physics]/Instrumentations et Détecteurs [physics.ins-det]
Physique [physics]/Physique [physics]/Physique Générale [physics.gen-ph]

English abstract : [en]

III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As ...
Show more >III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al0.2Ga0.8As multi-quantum-well heterostructure to demonstrate heterodyne detection at l~10µm with a nearly flat frequency response up to 70GHz at room temperature, solely limited by the measurement system bandwidth. This is the broadest RFbandwidth reported to date for a quantum-well mid-infrared photodetector. Responsivities of 0.15A/W and 1.5A/W are obtained at 300K and 77K respectively. To allow ultrafast operation and illumination at normal incidence, the detector consists of a 50W coplanar waveguide, monolithically integrated with a 2D-array of sub-wavelength patch antennas, electrically interconnected by suspended wires. With this device architecture we obtain a parasitic capacitance of ~30fF, corresponding to the static capacitance of the antennas, yielding a RClimited 3dB cutoff frequency >150GHz at 300K, extracted with a small-signal equivalent circuit model. Using this model, we quantitively reproduce the detector frequency response and find intrinsic roll-off time constants as low as 1ps at room temperature.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Détecteur infrarouge hétérodyne haute fréquence
NanoAntennes pour Emetteurs InfraRouge

Comment :

publié dans ACS photonics 10.1021/acsphotonics.0c01299

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL