Titre :

Investigation of resistive switching and transport mechanisms of Al ₂O₃/TiO_2−<i>x</i> memristors under cryogenic conditions (1.5 K)

Auteur(s) :

Beilliard, Yann [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Paquette, François [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Brousseau, Frédéric [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Ecoffey, Serge [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Alibart, Fabien [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Drouin, Dominique [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]

Titre de la revue :

Aip Advances

Pagination :

025305

Éditeur :

American Institute of Physics- AIP Publishing LLC

Date de publication :

2020

ISSN :

2158-3226

Mot(s)-clé(s) en anglais :

Al2O3/TiO2-x memristor
cryogenic electronics
negative differential resistance
metal-insulator transition
hopping conduction

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. ...
Lire la suite >Resistive switching and transport mechanisms of Al2O3/TiO2−x memristor crosspoint devices have been investigated at cryogenic temperatures down to 1.5 K, for the future development of memristor-based cryogenic electronics. We report successful resistive switching of our devices in the temperature range of 300–1.5 K. The current–voltage curves exhibit negative differential resistance effects between 130 K and 1.5 K, attributed to a metal–insulator transition of the Ti4O7 conductive filament. The resulting highly nonlinear behavior is associated with an ION/IOFF diode ratio of 84 at 1.5 K, paving the way for selector-free cryogenic passive crossbars. Temperature-dependent thermal activation energies related to the conductance at low bias (20 mV) are extracted for memristors in a low resistance state, suggesting hopping-type conduction mechanisms. Finally, the transport mechanism analysis at 1.5 K indicates that for all resistance states, the conduction follows the space-charge limited current model in low fields, whereas trap-assisted tunneling dominates in higher fields.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet Européen :

An iono-electronic neuromorphic interface for communication with living systems

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL