A new equivalent circuit scheme for grounded ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
A new equivalent circuit scheme for grounded back-to-back GCPW-MS-GCPW transitions fabricated on a thin low-k substrate
Author(s) :
Dugué, Pierre-Vincent [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
El Gibari, Mohammed [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Halbwax, Mathieu [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ginestar, Stephane [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Avramovic, Vanessa [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, Hong Wu [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Institut d'Électronique et des Technologies du numéRique [IETR]
El Gibari, Mohammed [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Halbwax, Mathieu [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ginestar, Stephane [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Avramovic, Vanessa [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, Hong Wu [Auteur]
Institut d'Électronique et des Technologies du numéRique [IETR]
Journal title :
Progress In Electromagnetics Research Letters
Pages :
33-42
Publisher :
EMW Publishing
Publication date :
2021
ISSN :
1937-6480
HAL domain(s) :
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Autre
Sciences de l'ingénieur [physics]/Autre
English abstract : [en]
We hereby present a new equivalent circuit model including both lumped and distributed elements for GCPW-MS transitions (GCPW for Grounded CoplanarWaveguide and MS for Microstrip). In order to validate the modelling results, ...
Show more >We hereby present a new equivalent circuit model including both lumped and distributed elements for GCPW-MS transitions (GCPW for Grounded CoplanarWaveguide and MS for Microstrip). In order to validate the modelling results, such transitions have been fabricated on a 20 μm-thick BCB (Benzocyclobutene resin) substrate using grounding pads including via-holes of different diameters. The study focused on the impact of the via-hole diameter on the performance of the transition and more specifically on its bandwidth. The transitions were made using a simple technological process based on photosensitive polymer. ADS simulation data of the new equivalent circuit model were in very good agreement with measured S-parameters. Both theoretical and experimental results have shown that the bandwidth of such a transition can reach up to 100 GHz using via-holes of 900 μm diameter.Show less >
Show more >We hereby present a new equivalent circuit model including both lumped and distributed elements for GCPW-MS transitions (GCPW for Grounded CoplanarWaveguide and MS for Microstrip). In order to validate the modelling results, such transitions have been fabricated on a 20 μm-thick BCB (Benzocyclobutene resin) substrate using grounding pads including via-holes of different diameters. The study focused on the impact of the via-hole diameter on the performance of the transition and more specifically on its bandwidth. The transitions were made using a simple technological process based on photosensitive polymer. ADS simulation data of the new equivalent circuit model were in very good agreement with measured S-parameters. Both theoretical and experimental results have shown that the bandwidth of such a transition can reach up to 100 GHz using via-holes of 900 μm diameter.Show less >
Language :
Anglais
Popular science :
Non
Source :
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