Titre :

Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

Auteur(s) :

Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Besendörfer, Sven [Auteur]
Fraunhofer Institute for Integrated Systems and Device Technology [Fraunhofer IISB]
Meissner, Elke [Auteur]
Fraunhofer Institute for Integrated Systems and Device Technology [Fraunhofer IISB]
Derluyn, Joff [Auteur]
Degroote, Stefan [Auteur]
Germain, Marianne [Auteur]
Miyake, Hideto [Auteur]
Mie University

Titre de la manifestation scientifique :

32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD 2020)

Ville :

Vienne

Pays :

Autriche

Date de début de la manifestation scientifique :

2020-09-13

Titre de la revue :

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Éditeur :

IEEE

Mot(s)-clé(s) en anglais :

AlGaN channel
High-Electron-Mobility Transistor (HEMT)
Ultra-Wide Band Gap
AlN

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work ...
Lire la suite >Ultra wide band gap (UWBG) materials such as AlN are part of a class of materials that have a larger band gap than conventional wide band gap (WBG) materials such as GaN, allowing higher operating voltages. In this work we present the fabrication and DC / high voltage characterizations of AlN/AlGaN/AlN double heterostructure that are regrown by metalorganic chemical vapor deposition on AlN/sapphire. A buffer breakdown about 1100V with low leakage current for a spacing below 2µm is reported, which corresponds to a breakdown field about 6 MV/cm. Furthermore, transistors have been successfully fabricated on this heterostructure with low leakage current and low on-resistance. A breakdown voltage of 4.5kV with an off-state leakage current below 0.1 µA/mm have been indeed achieved. These results that AlGaN-channel HEMTs are promising for high power, high temperature future applications.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Matériaux à ultra large bande interdite pour les futurs applications d'électronique de puissance

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL