Titre :

Buffer breakdown in GaN-on-Si HEMTs: A comprehensive study based on a sequential growth experiment

Auteur(s) :

Borga, Matteo [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Meneghini, Matteo [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Benazzi, Davide [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Canato, Eleonora [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Püsche, Roland [Auteur]
Derluyn, Joff [Auteur]
Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Meneghesso, Gaudenzio [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]
Zanoni, Enrico [Auteur]
Dipartimento di Ingegneria de l'Informazione [Padova] [DEI]

Titre de la revue :

Microelectronics Reliability

Pagination :

113461

Éditeur :

Elsevier

Date de publication :

2019

ISSN :

0026-2714

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation ...
Lire la suite >The aim of this work is to investigate the breakdown mechanisms of the layers constituting the vertical buffer of GaN-on-Si HEMTs; in addition, for the first time we demonstrate that the breakdown field of the AlN nucleation layer grown on a silicon substrate is equal to 3.2 MV/cm and evaluate its temperature dependence. To this aim, three samples, obtained by stopping the epitaxial growth of a GaN on Silicon stack at different steps, are studied and compared: Si/AlN, Si/AlN/ AlGaN, full vertical stack up to the Carbon doped buffer layer. The current-voltage (IV) characterizations performed at both room temperature and high temperature show that: (i) the defectiveness of the AlN nucleation layer is the root cause of the leakage through an AlN/Silicon junction, and causes the vertical I-V characteristics to have a high device-to-device variability; (ii) the first AlGaN layer grown over the AlN, beside improving the breakdown voltage of the whole structure, causes the leakage current to be more stable and uniform across the sample area; (iii) a thick strain-relief stack and a carbon-doped GaN buffer enhance the breakdown voltage up to more than 750 V at 170°C, and guarantee a remarkably low device-to-device variability. Furthermore, a set of constant voltage stress on the Si/AlN sample demonstrate that the aluminum nitride layer shows a time dependent breakdown, with Weibull-distributed failures and a shape factor greater than 1, in line with the percolation model.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Projet ANR :

Développement de composants innovants à base de GaN sur substrat de silicium pour la future génération de composants de puissance à haut rendement

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL