Title :

Importance of buffer configuration in GaN HEMTs for high microwave performance and robustness

Author(s) :

Pécheux, Romain [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogmus, Ezgi [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Linge, Astrid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Okada, Etienne [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC)

City :

Leuven

Country :

Belgique

Start date of the conference :

2017-09-11

Publisher :

IEEE

English keyword(s) :

double heterostructure field effect transistor (DHFET)
GaN
high electron mobility transistors (HEMTs)
output power density and power added efficiency (PAE)

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure ...
Show more >We report on a comparison of the ultrathin (sub-10 nm barrier thickness) AlN/GaN heterostructure using two types of buffer layers: 1) carbon doped GaN high electron mobility transistors (HEMTs) and 2) double heterostructure field effect transistor (DHFET). It is observed that the carbon doped HEMT structure shows better electrical characteristics, with a maximum drain current density Id of 1.3 A/mm, a transconductance Gm of 500 mS/mm and a maximum oscillation frequency fmax of 234 GHz while using a gate length of 220 nm. The low trapping effects together with high frequency performance and excellent electron confinement under high bias enabled to achieve a state-of-the-art combination at 18 GHz of output power density (Pout > 6 W/mm) and power added efficiency (PAE) close to 40% at Vds as high as 30V. At 40 GHz, a PAE above 35% is still observed in spite of the rather large gate length. A key feature is the low gate leakage current of only few tenths of μA/mm that remains stable after many load-pull sweeps at various frequency in the case of carbon doped HEMT, which is attributed to a significant reduction of the self-heating as compared to the DHFET.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL