Titre :

Multilayer Pt/Al based ohmic contacts for AlGaN/GaN heterostructures stable up to 600°C ambient air

Auteur(s) :

Goyal, Nitin [Auteur]
Dusari, Srujana [Auteur]
Bardong, Jochen [Auteur]
Medjdoub, Farid [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kenda, Andreas [Auteur]
Binder, Alfred [Auteur]

Titre de la revue :

Solid-State Electronics

Pagination :

107-110

Éditeur :

Elsevier

Date de publication :

2016

ISSN :

0038-1101

Mot(s)-clé(s) en anglais :

AlGaN/GaN
Metallization
Harsh environments
Wide band gap semiconductors

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The ...
Lire la suite >In this paper, we present a Pt/Al multilayer stack-based ohmic contact metallization for AlGaN/GaN heterostructures. CTLM structures were fabricated to assess the electrical properties of the proposed metallization. The fabricated stack shows excellent stability after more than 100 hours of continuous aging at 600oC in air. Measured I-V characteristics of the fabricated samples show excellent linearity after the aging. The Pt/Al-based metallization shows great potential for future device and sensor applications in extreme environment conditions.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL