Titre :

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

Auteur(s) :

Chikoidze, E. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Tchelidze, T. [Auteur]
Ivane Javakhishvili Tbilisi State University [TSU]
Sartel, C. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Chi, Z. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Kabouche, R. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Madaci, I. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Rubio, C. [Auteur]
ICN2 - Institut Catala de Nanociencia i Nanotecnologia [ICN2]
Mohamed, H. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
National Research Centre - NRC (EGYPT)
Sallet, V. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Medjdoub, Farid [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perez-Tomas, A. [Auteur]
ICN2 - Institut Catala de Nanociencia i Nanotecnologia [ICN2]
Dumont, Y. [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]

Titre de la revue :

Materials Today Physics

Pagination :

100263, 9 pages

Éditeur :

Elsevier

Date de publication :

2020-12

ISSN :

2542-5293

Mot(s)-clé(s) en anglais :

Ultra-wide band gap
MOCVD growth
p type β-Ga2O3
Electrical properties
Critical Electrical field

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

Which the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga₂O₃ is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide ...
Lire la suite >Which the actual critical electrical field of the ultra-wide bandgap semiconductor β-Ga₂O₃ is? Even that it is usual to find in the literature a given value for the critical field of wide and ultra-wide semiconductors such as SiC (3 MV/cm), GaN (3.3 MV/cm), β-Ga₂O₃ (~8 MV/cm) and diamond (10 MV/cm), this value actually depends on intrinsic and extrinsic factors such as the bandgap energy, material residual impurities or introduced dopants. Indeed, it is well known from 1950’s that reducing the residual doping (N_B) of the semiconductor layer increases the breakdown voltage capability of a semiconductor media (e.g. as N_B^-3/4 by using the Fulop’s approximation for an abrupt junction). A key limitation is, therefore, the residual donor/acceptor concentration generally found in these materials. Here, we report that doping with amphoteric Zinc a p-type β-Ga₂O₃ thin films shortens free carrier mean free path (0.37nm), resulting in the ultra-high critical electrical field of 13.2 MV/cm. Therefore, the critical breakdown field can be, at least, four times larger for the emerging Ga₂O₃ power semiconductor as compared to SiC and GaN. We further explain these wide-reaching experimental facts by using theoretical approaches based on the impact ionization microscopic theory and thermodynamic calculations.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL