Raman characterization of Ar+ ion-implanted GaN

Boudart, B.; Guhel, Y.; Pesant, J. C.; Dhamelincourt, P.; Poisson, M. A.

Type de document :

Article dans une revue scientifique

DOI :

10.1002/jrs.856

Titre :

Raman characterization of Ar+ ion-implanted GaN

Auteur(s) :

Boudart, B. [Auteur]
Guhel, Y. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pesant, J. C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dhamelincourt, P. [Auteur]
Centre d'Etudes et de Recherches Lasers et Applications [CERLA]
Poisson, M. A. [Auteur]

Titre de la revue :

Journal of Raman Spectroscopy

Pagination :

283-286

Éditeur :

Wiley

Date de publication :

2002-04

ISSN :

0377-0486

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Ar+ ions were implanted at room temperature in n-type hexagonal GaN for device isolation purpose. We performed electrical measurements and resonance Raman spectroscopy in order to monitor the electrical and structural ...
Lire la suite >Ar+ ions were implanted at room temperature in n-type hexagonal GaN for device isolation purpose. We performed electrical measurements and resonance Raman spectroscopy in order to monitor the electrical and structural changes of non-annealed and annealed implanted GaN samples. On increasing the implantation dose from 3.4 × 1012 to 3.4 × 1014 ions cm−2, an increase in the electrical isolation and a decrease in the photoluminescence were observed. For a 1016 ions cm−2 dose, the implanted layer became conductive owing to a hopping mechanism and only the first-order phonon lines remained observable. After annealing at 900 °C for 30 s, the implanted samples became conductive and the photoluminescence reappeared or increased compared with the non-annealed samples at same implantation doses, except for the sample implanted at the highest dose, which became insulating.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :