Titre :

Correlation between morphological, electrical and optical properties of GaN at all stages of MOVPE Si/N treatment growth

Auteur(s) :

Halidou, I. [Auteur]
Unité de Recherche sur les Hétéro Épitaxies et Applications [Monastir] [URHEA]
Benzarti, Z. [Auteur]
Université de Sfax - University of Sfax
Unité de Recherche sur les Hétéro Épitaxies et Applications [Monastir] [URHEA]
Bougrioua, Zahia [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Boufaden, T. [Auteur]
Unité de Recherche sur les Hétéro Épitaxies et Applications [Monastir] [URHEA]
El Jani, B. [Auteur]
Unité de Recherche sur les Hétéro Épitaxies et Applications [Monastir] [URHEA]

Titre de la revue :

Superlattices and Microstructures

Pagination :

490-495

Éditeur :

Elsevier

Date de publication :

2006-10

ISSN :

0749-6036

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

GaN has been grown using Si/N treatment growth by MOVPE on sapphire (0001) in a home-made vertical reactor. The growth was monitored by in situ laser reflectometry. The morphological, electrical and optical properties of ...
Lire la suite >GaN has been grown using Si/N treatment growth by MOVPE on sapphire (0001) in a home-made vertical reactor. The growth was monitored by in situ laser reflectometry. The morphological, electrical and optical properties of GaN are investigated at all the growth stages. To this aim, the growth was interrupted at different stages. The obtained samples are ex situ characterized by scanning electron microscopy (SEM), room temperature Van der Pauw–Hall electrical transport and low temperature (13 K) photoluminescence (PL) measurements. The SEM images show clearly the coalescence process. A smooth surface is obtained for a fully coalesced layer. During the coalescence process, the electron concentration () and mobility () vary from 2E+19 cm−3 to 2E+17 /cm3 and 12 cm²/V/s – 440 cm²/V/s, respectively. The PL maxima shift to higher energy and the FWHM decreases to about 4 meV. A correlation between PL spectra and Hall effect measurements is made. We show that the FWHM follows a power law for above 1E+18 /cm3.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL