Title :

Thermal stability of Pt- and Ni-based Schottky contacts on GaN and Al 0.31 Ga 0.69 N

Author(s) :

Monroy, E. [Auteur]
Nanophysique et Semiconducteurs [NPSC]
Calle, F. [Auteur]
Instituto de Sistemas Optoelectrónicos y Microtecnología [ISOM]
Ranchal, R. [Auteur]
Universidad Complutense de Madrid = Complutense University of Madrid [Madrid] [UCM]
Palacios, T. [Auteur]
Verdu, M. [Auteur]
Sanchez, F [Auteur]
Montojo, M [Auteur]
Eickhoff, M. [Auteur]
Omnès, Franck [Auteur]
Bougrioua, Zahia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, I. [Auteur]

Journal title :

Semiconductor Science and Technology

Pages :

L47-L54

Publisher :

IOP Publishing

Publication date :

2002-09-01

ISSN :

0268-1242

HAL domain(s) :

Physique [physics]

English abstract : [en]

In this work we analyse the performance of Pt- and Ni-based Schottky metallizations on AlxGa1−xN (x = 0, 0.31). An intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of ...
Show more >In this work we analyse the performance of Pt- and Ni-based Schottky metallizations on AlxGa1−xN (x = 0, 0.31). An intermediate thin Ti layer is shown to enhance the thermal stability of Pt/Au, and leads to an increase of the Schottky barrier height. Pt/Ti/Au contacts on GaN provide a barrier height of 1.18 ± 0.07 eV, increasing up to 2.0 ± 0.1 eV on Al0.31Ga0.69N. Further improvement of Schottky contacts is achieved by surface passivation with plasma-enhanced chemical vapour deposited SiO2 or SixNy, which reduces the leakage current by two orders of magnitude and structural modifications in the metal due to thermal ageing.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL