Title :

Material optimisation for AlGaN/GaN HFET applications

Author(s) :

Bougrioua, Zahia [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moerman, I. [Auteur]
Sharma, N. [Auteur]
Wallis, R.H. [Auteur]
Cheyns, J. [Auteur]
Jacobs, K. [Auteur]
Thrush, E.J. [Auteur]
Considine, L. [Auteur]
Beanland, R. [Auteur]
Farvacque, J.-L. [Auteur]
Université de Lille, Sciences et Technologies
Humphreys, C. [Auteur]

Journal title :

Journal of Crystal Growth

Pages :

573-578

Publisher :

Elsevier

Publication date :

2001-09

ISSN :

0022-0248

HAL domain(s) :

Physique [physics]

English abstract : [en]

An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth ...
Show more >An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth of semi-insulating buffers have been identified and are described. TEM analysis shows that the insulating character is not due to a high density of dislocations, whereas SIMS analysis shows that classical impurity (Si, O and C) concentrations are in the same range as in conductive undoped layers. Further studies are needed to identify the traps responsible for the compensation of the GaN layers. The properties of the two-dimensional electron gas (2DEG) located at the AlGaN–GaN interface can be tuned by modifying the characteristics of the AlGaN layer and of the insulating buffer. The best mobility (1500 cm²/V/s for n∼6×10e12/cm²) is obtained when using a thick buffer layer, whereas the sheet carrier density is found to increase with the Al content in the undoped supply layer and reaches 1.1×10e13 /cm² for a composition of 24%.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL