Title :

Tunable Surface Structuration of Silicon by Metal Assisted Chemical Etching with Pt Nanoparticles under Electrochemical Bias

Author(s) :

Torralba-Penalver, Encarnacion [Auteur]
Institut de Chimie et des Matériaux Paris-Est [ICMPE]
Le Gall, Sylvain [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Lachaume, R. [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Magnin, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Harari, Joseph [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Halbwax, Mathieu [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cachet-Vivier, Christine [Auteur]
Institut de Chimie et des Matériaux Paris-Est [ICMPE]
Bastide, S. [Auteur]
Institut de Chimie et des Matériaux Paris-Est [ICMPE]

Journal title :

ACS Applied Materials & Interfaces
ACS, Applied Materials & Interfaces

Pages :

31375

Publisher :

Washington, D.C. : American Chemical Society

Publication date :

2016-10-26

ISSN :

1944-8244

English keyword(s) :

metal assisted chemical etching
c-Si
platinum
cyclic voltammetry
impedance spectroscopy
2D band bending modeling
Si texturization
cone-shaped macropores

HAL domain(s) :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Physique [physics]
Chimie
Sciences de l'environnement/Ingénierie de l'environnement
Chimie/Matériaux

English abstract : [en]

An in-depth study of metal assisted chemical etching (MACE) of p-type c-Si in HF/H2O2 aqueous solutions using Pt nanoparticles as catalysts is presented. Combination of cyclic voltammetry, open circuit measurements, ...
Show more >An in-depth study of metal assisted chemical etching (MACE) of p-type c-Si in HF/H2O2 aqueous solutions using Pt nanoparticles as catalysts is presented. Combination of cyclic voltammetry, open circuit measurements, chronoamperometry, impedance spectroscopy, and 2D band bendingmodeling of the metal/semiconductor/electrolyte interfaces at the nanoscale and under different etching conditions allows gaining physical insights into this system. Additionally, in an attempt to mimic the etching conditions, the modeling has been performed with a positively biased nanoparticle buried in the Si substrate. Following these findings, the application of an external polarization during etching is introduced as a novel efficient approach for achieving straightforward control of the pore morphology by acting upon the band bending at the Si/electrolyte junction. In this way, nanostructures ranging from straight mesopores to cone-shaped macropores are obtained as the Si sample is biased from negative to positive potentials. Remarkably, macroscopic cone-shaped pores in the 1−5 μm size range with a high aspect ratio (L/W ∼ 1.6) are obtained by this method. This morphology leads to a reduction of the surface reflectance below 5% over the entire VIS-NIR domain, which outperforms macrostructures made by state of the art texturization techniques for Si solar cells.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Structuration de surface du silicium par un procédé de gravure par contact utilisant des électrodes métalliques

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL