Titre :

Modeling and optimization of core (p-GaN)-multishell (i-InxGa1-xN/i-GaN/n-Al0.1Ga0.9N /n-GaN) nanowire for photovoltaic applications

Auteur(s) :

Aissat, Abdelkader [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de Traitement de Signal et Imagerie [Blida] [LATSI]
Benyettou, Fethi [Auteur]
Berbezier, Isabelle [Auteur]
Institut des Matériaux, de Microélectronique et des Nanosciences de Provence [IM2NP]
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Superlattices and Microstructures

Pagination :

209-216

Éditeur :

Elsevier

Date de publication :

2018-08

ISSN :

0749-6036

Mot(s)-clé(s) en anglais :

Semiconductor III-V
Nanowire
Core/shell
Solar cell

Discipline(s) HAL :

Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Matériaux

Résumé en anglais : [en]

In this work we report a modeling and optimization of a novel core (p-GaN)-multishell (i-InxGa1-xN/i-GaN/n-Al0.1Ga0.9N/n-GaN) coaxial NWs with a total length of about 3 μm and a radius of 0.19 μm. The variation of Indium ...
Lire la suite >In this work we report a modeling and optimization of a novel core (p-GaN)-multishell (i-InxGa1-xN/i-GaN/n-Al0.1Ga0.9N/n-GaN) coaxial NWs with a total length of about 3 μm and a radius of 0.19 μm. The variation of Indium composition in the i-InxGa1-xN active layer shows that x = 15% is the optimal composition that gives a good short circuit current and efficiency of about 2.24 mA/cm2 and 2.93%, respectively. Beyond x = 35% the structure starts to present deteriorations. Moreover, the optimal x composition founded provides a gain of about 12.9% of EQE in the mid-infrared part. The study of the variation of the total current density along the nanowire demonstrates that the maximum of this latter is located in AlGaN cladding shell layer and at the interfaces between the i-region and AlGaN cladding shell layer. In other hand, our results show that our structure presents an optimal efficiency of about 3.5% at a temperature of 275 K with the same AM1.5G solar spectrum.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL