Scaling of AlN/GaN HEMT for millimeter-wave power applications

Harrouche, K.; Kabouche, Riad; Zegaoui, Malek; Medjdoub, Farid

Type de document :

Communication dans un congrès avec actes

Titre :

Scaling of AlN/GaN HEMT for millimeter-wave power applications

Auteur(s) :

Harrouche, K. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kabouche, Riad [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Zegaoui, Malek [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2019

Ville :

Cabourg

Pays :

France

Date de début de la manifestation scientifique :

2019-06-17

Titre de l’ouvrage :

2019 WOCSDICE proceeding

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

In this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. ...
Lire la suite >In this paper, we report on AlN/GaN HEMTs for high frequency applications. Various gate lengths have been studied as a function of the gate-drain distance in order to analyze the impact on the DC, RF and power performances. Electrical characteristics of this structure for 110 nm gate length show a maximum drain current of 1.2 A/mm, an extrinsic transconductance Gm of 400 mS/mm and a FT/Fmax of 63/300 GHz at a drain bias voltage VDS = 20V. An excellent electron confinement with a low leakage current below 10 µA/mm is achieved. Furthermore, a breakdown voltage of 55 V for GD0.5 and up to 140 V for GD2.5 are observed when using a 110 nm short gate length. Large signal characteristics at 40 GHz reveal a state-of-the-art combination of power added efficiency (PAE) (50%) with an output power density (Pout) of 3.6 W/mm at VDS = 20 V in continuous wave mode (CW) and PAE of 50% associated with a Pout of 8.3 W/mm at 40V in pulsed mode. It can be noticed that the 110 nm gate length GD0.5 showed no degradation after semi-on robustness tests and large signal measurements up-to VDS = 20V.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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