Titre :

Moving liquids with light: Photoelectrowetting on semiconductors

Auteur(s) :

Arscott, Steve [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Scientific Reports

Pagination :

184

Éditeur :

Nature Publishing Group

Date de publication :

2011

ISSN :

2045-2322

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Mécanique [physics.med-ph]/Mécanique des fluides [physics.class-ph]

Résumé en anglais : [en]

By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical ...
Lire la suite >By linking semiconductor physics and wetting phenomena a brand new effect termed “photoelectrowetting-on-semiconductors” is demonstrated here for a conducting droplet resting on an insulator-semiconductor stack. Optical generation of carriers in the space-charge region of the underlying semiconductor alters the capacitance of the liquid-insulator-semiconductor stack; the result of this is a modification of the wetting contact angle of the droplet upon illumination using above band gap light. The effect is demonstrated using commercial silicon wafers, both n- and p-type having a doping range spanning four orders of magnitude (6×1014−8×1018 cm−3), coated with a commercial amorphous fluoropolymer insulating film (Teflon®). Impedance measurements confirm that the observations are semiconductor space-charge related effects. The impact of the work could lead to new silicon-based technologies in areas such as Laboratory-on-a-Chip, Microfluidics and Optofluidics.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL