Complexity of the hot carrier relaxation in Si nanowires compared to bulk

Li, Jing; Niquet, Yann-Michel; Delerue, Christophe

Type de document :

Article dans une revue scientifique: Article original

DOI :

10.1103/PhysRevB.95.205401

Titre :

Complexity of the hot carrier relaxation in Si nanowires compared to bulk

Auteur(s) :

Li, Jing [Auteur]
Théorie de la Matière Condensée [NEEL - TMC]
Niquet, Yann-Michel [Auteur]
Institut Nanosciences et Cryogénie [INAC]
Delerue, Christophe [Auteur]

Physique - IEMN [PHYSIQUE - IEMN]

Titre de la revue :

Physical Review B

Pagination :

205401

Éditeur :

American Physical Society

Date de publication :

2017

ISSN :

2469-9950

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

We investigate the relaxation of hot carriers by emission of phonons in bulk Si and Si nanowires (NWs) with an identical atomistic methodology. The phonon scattering is strongly enhanced in NWs. At high excitation energy, ...
Lire la suite >We investigate the relaxation of hot carriers by emission of phonons in bulk Si and Si nanowires (NWs) with an identical atomistic methodology. The phonon scattering is strongly enhanced in NWs. At high excitation energy, the carrier cooling is faster in NWs than in bulk, mainly due to the coupling to surface phonons. Slow relaxation is only noticed for electrons at low energy in the conduction band of thin NWs due to the quantum confinement that lifts the degeneracy of the valleys. This work gives insight into the complexity of the carrier cooling in semiconductor nanostructures.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Modélisation de nanodispositifs pour des applications à faible consommation

Collections :