Titre :

Drift velocity versus electric field in < 110 > Si nanowires: Strong confinement effects

Auteur(s) :

Li, Jing [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Mugny, Gabriel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Niquet, Yann-Michel [Auteur]
Laboratory of Atomistic Simulation [LSIM ]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Applied Physics Letters

Pagination :

063103

Éditeur :

American Institute of Physics

Date de publication :

2015

ISSN :

0003-6951

Mot(s)-clé(s) en anglais :

Transport-Properties
Silicon Nanowires
Semiconductors
Simulation
Mobility
Dot

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

We have performed atomistic simulations of the phonon-limited high field carrier transport in < 110 > Si nanowires with small diameter. The carrier drift velocities are obtained from a direct solution of the non-linear ...
Lire la suite >We have performed atomistic simulations of the phonon-limited high field carrier transport in < 110 > Si nanowires with small diameter. The carrier drift velocities are obtained from a direct solution of the non-linear Boltzmann transport equation. The relationship between the drift velocity and the electric field considerably depends on the carrier, temperature, and diameter of the nanowires. In particular, the threshold between the linear and non-linear regimes exhibits important variations. The drift velocity reaches a maximum value and then drops. These trends can be related to the effects of quantum confinement on the band structure of the nanowires. We also discuss the impact of the different phonon modes and show that high-energy phonons can, unexpectedly, increase the drift velocity at a high electric field. (C) 2015 AIP Publishing LLC.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Projet ANR :

Modélisation de nanodispositifs pour des applications à faible consommation

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL