Nerve Agent Sensors Sub-ppm Detection of ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Nerve Agent Sensors Sub-ppm Detection of Nerve Agents Using Chemically Functionalized Silicon Nanoribbon Field-Effect Transistors**
Author(s) :
Clavaguera, Simon [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Carella, Alexandre [Auteur correspondant]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Caillier, Laurent [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Celle, Caroline [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Pécaut, Jacques [Auteur]
Institut Nanosciences et Cryogénie [INAC]
Lenfant, Stephane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Simonato, Jean-Pierre [Auteur correspondant]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Carella, Alexandre [Auteur correspondant]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Caillier, Laurent [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Celle, Caroline [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Pécaut, Jacques [Auteur]
Institut Nanosciences et Cryogénie [INAC]
Lenfant, Stephane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Simonato, Jean-Pierre [Auteur correspondant]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN]
Journal title :
Angewandte Chemie
Pages :
4063-4066
Publisher :
Wiley-VCH Verlag
Publication date :
2010
ISSN :
0044-8249
English keyword(s) :
nanotechnology
field-effect transistors
nerve agents
sensors
silicon nanoribbons
field-effect transistors
nerve agents
sensors
silicon nanoribbons
HAL domain(s) :
Chimie/Chimie organique
Chimie/Chimie analytique
Physique [physics]/Matière Condensée [cond-mat]
Chimie/Chimie analytique
Physique [physics]/Matière Condensée [cond-mat]
English abstract : [en]
Organophosphorus compounds (OPs) represent one of the most important and lethal classes of chemical warfare agents (e.g. sarin, tabun, soman). Highly active volatile OPs are powerful inhibitors of acetylcholinesterase, ...
Show more >Organophosphorus compounds (OPs) represent one of the most important and lethal classes of chemical warfare agents (e.g. sarin, tabun, soman). Highly active volatile OPs are powerful inhibitors of acetylcholinesterase, which is a critical enzyme of the nervous system. [1] The ease of manufacturing OPs based on inexpensive starting materials makes these agents a weapon of choice for terrorist attacks. [2] Thus, the rapid sensing of these nerve agents has recently become an increasingly important research goal. Various approaches have been reported for the detection of these chemical warfare agents including colorimetric and fluorimetric spec-troscopies, [3] enzymatic assays, [4] piezoelectric devices, [5] single-walled carbon nanotube resistors [6] and capacitors. [7] However, these systems are plagued by limitations such as slow response time, moderate selectivity, operational complexity , or limited portability. Field-effect transistors (FET) based on nanomaterials such as semiconducting nanowires, nanoribbons, or carbon nanotubes have been recently explored for chemical and biological detection. [8] Their high effectiveness is mainly ascribed to an extreme sensitivity to electrostatic changes at the surface of the semiconductor and/or modifications of the Schottky barrier at the semiconductor/metal interface. A charge generation in the vicinity of the semiconductor of a FET is known to alter the electrical properties of the device. [9]Show less >
Show more >Organophosphorus compounds (OPs) represent one of the most important and lethal classes of chemical warfare agents (e.g. sarin, tabun, soman). Highly active volatile OPs are powerful inhibitors of acetylcholinesterase, which is a critical enzyme of the nervous system. [1] The ease of manufacturing OPs based on inexpensive starting materials makes these agents a weapon of choice for terrorist attacks. [2] Thus, the rapid sensing of these nerve agents has recently become an increasingly important research goal. Various approaches have been reported for the detection of these chemical warfare agents including colorimetric and fluorimetric spec-troscopies, [3] enzymatic assays, [4] piezoelectric devices, [5] single-walled carbon nanotube resistors [6] and capacitors. [7] However, these systems are plagued by limitations such as slow response time, moderate selectivity, operational complexity , or limited portability. Field-effect transistors (FET) based on nanomaterials such as semiconducting nanowires, nanoribbons, or carbon nanotubes have been recently explored for chemical and biological detection. [8] Their high effectiveness is mainly ascribed to an extreme sensitivity to electrostatic changes at the surface of the semiconductor and/or modifications of the Schottky barrier at the semiconductor/metal interface. A charge generation in the vicinity of the semiconductor of a FET is known to alter the electrical properties of the device. [9]Show less >
Language :
Anglais
Popular science :
Non
Source :
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