Titre :

Epitaxial GaAs for X-ray imaging

Auteur(s) :

Sun, G. C. [Auteur]
Rao, R. [Auteur]
Makham, S. [Auteur]
Bourgoin, J. C. [Auteur]
Zhang, X. Y. [Auteur]
Gohier, R. [Auteur]
Institut des Nanosciences de Paris [INSP]
Masiello, F. [Auteur]
Haertwig, J. [Auteur]
Baruchel, J. [Auteur]
Ponchut, C. [Auteur]
Balocchi, Andrea [Auteur]
Laboratoire de physique et chimie des nano-objets [LPCNO]
Marie, Xavier [Auteur]
Laboratoire de physique et chimie des nano-objets [LPCNO]
Gilard, O. [Auteur]
Centre National d'Études Spatiales [Toulouse] [CNES]
Roch-Jeune, Isabelle [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pesant, J. C. [Auteur]

Titre de la revue :

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Pagination :

S65-S68

Éditeur :

ELSEVIER SCIENCE BV
Elsevier

Date de publication :

2011

ISSN :

0168-9002

Mot(s)-clé(s) en anglais :

Epitaxial layers
GaAs
X-ray imaging

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]

Résumé en anglais : [en]

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point ...
Lire la suite >To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the nature of the material. However, they have to be thick enough to absorb photons efficiently. We produced thick epitaxial layers using a proprietary technique and made p/i/n (200-300 mu m thick) diodes with this new material. These diodes are characterized by a large reverse current, which can originate from electron emission from deep level defects present in the depleted region or be a leakage current. In order to answer this question, we performed a characterization of the defects present in the material. Here, we describe results obtained from X-ray diffraction, X-ray topography, time resolved photoluminescence and resistivity measurements. We also investigated the possible effect of hydrogen. From these observations, we deduced that defects exhibiting an electrical role are in negligible concentration and concluded that the high reverse current observed is a leakage current. (C) 2010 Elsevier B.V. All rights reserved.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Commentaire :

11th International Workshop on Radiation Imaging Detectors, Czech Technical Univ, Inst Experimental & Applied Phys, Prague, CZECH REPUBLIC, JUN 29-JUL 03, 2009

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL