Titre :

Experimental Demonstration of <i>g<sub>m</sub></i>/I<i><sub>D</sub></i> Based Noise Analysis

Auteur(s) :

Ou, Jack [Auteur]
Sonoma State University [Rohnert Park]
Ferreira, Pietro M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lee, Jui-Chu [Auteur]

Titre de la revue :

Circuits and Systems

Date de publication :

2014-04

Mot(s)-clé(s) en anglais :

gm/ID Design Methodology
Noise Analysis
Flicker Noise

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

Recent studies using BSIM3 models have suggested that noise depends on the transconductance-to-drain ratio gm/ID of a transistor. However, to the best of our knowledge, no experimental result demonstrating gm/ID dependent ...
Lire la suite >Recent studies using BSIM3 models have suggested that noise depends on the transconductance-to-drain ratio gm/ID of a transistor. However, to the best of our knowledge, no experimental result demonstrating gm/ID dependent noise previously observed in simulation is available in the literature. This paper examines the underlying principles that make it possible to analyze noise using gm/ID based noise analysis. Qualitative discussion of normalized noise is presented along with experimental results from a 130 nm CMOS process. A close examination of the experimental results reveals that the device noise is width independent from 1 Hz to 10 kHz. Moreover, noise increases as gm/ID is reduced. The experiment observation that noise is width independent makes it possible for circuit designers to generate normalized parameters that are used to study noise intuitively and accurately.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL