In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Hasnaoui, Issam; Pottrain, Alexandre; Lacave, Thomas; Chevalier, Pascal; Gloria, Daniel; Gaquiere, Christophe

Document type :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1049/el.2014.0186

Title :

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Author(s) :

Hasnaoui, Issam [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pottrain, Alexandre [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Lacave, Thomas [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Chevalier, Pascal [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gloria, Daniel [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gaquiere, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Electronics Letters

Pages :

1070-1072

Publisher :

IET

Publication date :

2014

ISSN :

0013-5194

English abstract : [en]

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the ...
Show more >Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull characteristics are extracted from a 0.13 × 3 μm2 emitter area SiGe HBT. The aim of this study is to provide a solution to avoid losses related to probes and commercial tuners. Thereby, from design to measurements, power setup architecture, calibration and performances at 200 GHz are performed in a non-50 Ω environment. Finally, comparisons between measurements and simulation from a high current model (HICUM) show good agreement, demonstrating the capability of the measurement approach.Show less >

Language :

Anglais

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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