Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Schulz, Fabian; Drost, Robert; Hämäläinen, Sampsa K.; Demonchaux, Thomas; Seitsonen, Ari P.; Liljeroth, Peter

Type de document :

Article dans une revue scientifique: Article original

DOI :

10.1103/PhysRevB.89.235429

Titre :

Epitaxial hexagonal boron nitride on Ir(111) : a work function template

Auteur(s) :

Schulz, Fabian [Auteur]
Department of Applied Physics [Aalto]
Drost, Robert [Auteur]
Department of Applied Physics [Aalto]
Hämäläinen, Sampsa K. [Auteur]
Department of Applied Physics [Aalto]
Demonchaux, Thomas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Department of Applied Physics [Aalto]
Seitsonen, Ari P. [Auteur]
Liljeroth, Peter [Auteur]
Department of Applied Physics [Aalto]

Titre de la revue :

Physical Review B: Condensed Matter and Materials Physics (1998-2015)

Pagination :

2354293

Éditeur :

American Physical Society

Date de publication :

2014

ISSN :

1098-0121

Discipline(s) HAL :

Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]

Résumé en anglais : [en]

Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to ...
Lire la suite >Hexagonal boron nitride (h-BN) is a prominent member in the growing family of two-dimensional materials with potential applications ranging from being an atomically smooth support for other two-dimensional materials to templating growth of molecular layers. We have studied the structure of monolayer h-BN grown by chemical vapor deposition on Ir(111) by low-temperature scanning tunneling microscopy (STM) and spectroscopy (STS) experiments and state-of-the-art density functional theory (DFT) calculations. The lattice mismatch between the h-BN and Ir(111) surface results in the formation of a moiré superstructure with a periodicity of ~29 Å and a corrugation of ~0.4 Å. By measuring the field emission resonances above the h-BN layer, we find a modulation of the work function within the moiré unit cell of ~0.5 eV. DFT simulations for a 13-on-12 h-BN/Ir(111) unit cell confirm our experimental findings and allow us to relate the change in the work function to the subtle changes in the interaction between boron and nitrogen atoms and the underlying substrate atoms within the moiré unit cell. Hexagonal boron nitride on Ir(111) combines weak topographic corrugation with a strong work function modulation over the moiré unit cell. This makes h-BN/Ir(111) a potential substrate for electronically modulated thin film and heterosandwich structures.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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http://arxiv.org/pdf/1404.7371
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1404.7371
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