Impact of BEOL stress on BiCMOS9MW HBTs

Document type :
Communication dans un congrès avec actes
DOI :
10.1109/BCTM.2013.6798181
Title :
Impact of BEOL stress on BiCMOS9MW HBTs
Author(s) :
Canderle, Elodie [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chevalier, P. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Avenier, G. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Derrier, N. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Céli, D. [Auteur]
STMicroelectronics [Crolles] [ST-CROLLES]
Gaquiere, Christophe [Auteur] refId
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Conference title :
27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
City :
Bordeaux
Country :
France
Start date of the conference :
2013
Book title :
Proceedings of 27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013
Publication date :
2013
English keyword(s) :
BiCMOS
SiGe HBT
back-end of line (BEOL)
stress
bandgap
English abstract : [en]
Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference ...
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Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Collections :
Source :
Harvested from HAL