Title :

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Author(s) :

Danoy, Mathieu [Auteur]
Angry, Pierre-François [Auteur]
Gavrel, Julien [Auteur]
Brillard, Charlène [Auteur]
Desplanque, Ludovic [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wang, Y. [Auteur]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Ruterana, P. [Auteur]
Centre de recherche sur les Ions, les MAtériaux et la Photonique [CIMAP - UMR 6252]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014

City :

Montpellier

Country :

France

Start date of the conference :

2014

English abstract : [en]

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly ...
Show more >This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally, first results are reported using an AlxIn1-xSb interfacial layer which allows reaching 100% relaxation. However, this implies to lower the growth temperature around 450C in order to avoid excessive surface roughning. Further reduction of the growth temperature leads to the development of a strong relaxation anisotropy.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL