Limitations of the impulse response of ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Limitations of the impulse response of GaAs MSM photoswitch
Author(s) :
Benzeghda, Sabah [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Hobar, Farida [Auteur]
Laboratoire de recherche microsystèmes et instrumentation [LMI]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
International Journal of Advances in Engineering and Technology
Pages :
75-81
Publication date :
2014
English keyword(s) :
impulse response
MSM photodetector
space charge
MSM photodetector
space charge
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used ...
Show more >As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor-metal photoswitch fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswitch.Show less >
Show more >As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor-metal photoswitch fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswitch.Show less >
Language :
Anglais
Popular science :
Non
Source :