Effect of polarization switching cycles ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Effect of polarization switching cycles on the dielectric response and Rayleigh constant in Pb0.4Sr0.6TiO3 thin films
Auteur(s) :
Li, Kui [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dong, Xianlin [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
R Émiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, Tao [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Chen, Ying [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Wang, Genshui [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Key Laboratory of Inorganic Functional Materials and Devices
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dong, Xianlin [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
R Émiens, Denis [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Li, Tao [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Chen, Ying [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Wang, Genshui [Auteur]
Key Laboratory of Inorganic Functional Materials and Devices
Titre de la revue :
Journal of Applied Physics
Pagination :
064102
Éditeur :
American Institute of Physics
Date de publication :
2014
ISSN :
0021-8979
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, ...
Lire la suite >Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically investigated. The results indicated that the polarization switching improves the extrinsic dielectric response and dielectric nonlinearity of these thin films because of the dielectric response of the oxygen vacancy to the applied electric field, while shows weak effect on the intrinsic dielectric and ferroelectric response. Moreover, the Rayleigh constant showed different evolutions in the films prepared at different substrate temperatures.Lire moins >
Lire la suite >Pb0.4Sr0.6TiO3 thin films with good fatigue endurance were crystallized at low temperature compatible with the current semiconductor technology. The effect of polarization switching cycles on the ferroelectric properties, dielectric response, and Rayleigh constant in thin films were systematically investigated. The results indicated that the polarization switching improves the extrinsic dielectric response and dielectric nonlinearity of these thin films because of the dielectric response of the oxygen vacancy to the applied electric field, while shows weak effect on the intrinsic dielectric and ferroelectric response. Moreover, the Rayleigh constant showed different evolutions in the films prepared at different substrate temperatures.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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