Titre :

Design and simulation of Cd1-xZnxTe thin films epitaxied on CdTe substrate for photovoltaic devices applications

Auteur(s) :

Aissat, A. [Auteur]
Fathi, M. [Auteur]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la manifestation scientifique :

TerraGreen 13 International Conference 2013 - Advancements in Renewable Energy and Clean Environment

Ville :

Beirut

Pays :

Liban

Date de début de la manifestation scientifique :

2013

Titre de la revue :

Energy Procedia

Date de publication :

2013

Mot(s)-clé(s) en anglais :

semiconductors
solar cell
optoelectronics

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

This work concerns the study and the simulation of a structure containing II-VI semiconductor for photovoltaic application. We studied the influence of the zinc concentration on the various parameters of the alloy Cd1-xZnxTe ...
Lire la suite >This work concerns the study and the simulation of a structure containing II-VI semiconductor for photovoltaic application. We studied the influence of the zinc concentration on the various parameters of the alloy Cd1-xZnxTe epitaxied on a CdTe substrate. Indeed, the insertion of zinc increases the band gap of the alloy, which is not ideal to absorb the maximum of the solar spectrum, but for low concentrations of zinc the Cd1-xZnxTe ternary material becomes attractive in the photovoltaic field. We have shown that for a Zinc composition (x) = 5%, the band gap is 1.52 eV. And if x = 20%, the gap is 1.62 eV.Our simulation studies have demonstrated that by an introduction of a specific Zinc concentration, we successfully simulated the achieving of 19% efficiency for solar devices.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL