Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Alarcon Llado, Esther; Conesa-Boj, Sònia; Wallart, Xavier; Caroff, Philippe; Fontcuberta I Morral, Anna

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1088/0957-4484/24/40/405707

Titre :

Raman spectroscopy of self-catalyzed GaAs1-xSbx nanowires grown on silicon

Auteur(s) :

Alarcon Llado, Esther [Auteur]
Ecole Polytechnique Fédérale de Lausanne [EPFL]
Conesa-Boj, Sònia [Auteur]
Ecole Polytechnique Fédérale de Lausanne [EPFL]
Wallart, Xavier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Caroff, Philippe [Auteur]
Australian National University [ANU]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Fontcuberta I Morral, Anna [Auteur]
Ecole Polytechnique Fédérale de Lausanne [EPFL]

Titre de la revue :

Nanotechnology

Pagination :

405707-1-7

Éditeur :

Institute of Physics

Date de publication :

2013

ISSN :

0957-4484

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

Thanks to their wide band structure tunability, GaAs1−xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is ...
Lire la suite >Thanks to their wide band structure tunability, GaAs1−xSbx nanowires provide exciting perspectives in optoelectronic and energy harvesting applications. The control of composition and strain of these ternary alloys is crucial in the determination of their optical and electronic properties. Raman scattering provides information on the vibrational properties of materials, which can be related to the composition and strain. We present a systematic study of the vibrational properties of GaAs1−xSbx nanowires for Sb contents from 0 to 44%, as determined by energy-dispersive x-ray analyses. We find that optical phonons red-shift with increasing Sb content. We explain the shift by alloying effects, including mass disorder, dielectric changes and ionic plasmon coupling. The influence of Sb on the surface optical modes is addressed. Finally, we compare the luminescence yield between GaAs and GaAs1−xSbx, which can be related to a lower surface recombination rate. This work provides a reference for the study of ternary alloys in the form of nanowires, and demonstrates the tunability and high material quality of gold-free ternary antimonide nanowires directly grown on silicon.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :