Preparation of silicon-based nanowires and the thermochemistry of the process

Hourlier, D.; Lefebvre, P.; Perrot, P.

Document type :

Communication dans un congrès avec actes

DOI :

10.1051/jeep/200900002

Title :

Preparation of silicon-based nanowires and the thermochemistry of the process

Author(s) :

Hourlier, D. [Auteur]
Lefebvre, P. [Auteur]
Perrot, P. [Auteur]

Conference title :

35èmes Journées d'Etudes des Equilibres entre Phases, JEEP XXXV

City :

Annecy

Country :

France

Start date of the conference :

2009

Book title :

JEEP 2009

Publication date :

2009

English keyword(s) :

Silicon nanowires
VLS mechanism
thermodynamics
phase diagrams
nanosystems

HAL domain(s) :

Physique [physics]

English abstract : [en]

The present paper is part of a general investigation of the thermodynamic properties of metal-semiconductor systems involved in the nanowires growth. Here, we will show that many aspects of the growth mechanisms, such as ...
Show more >The present paper is part of a general investigation of the thermodynamic properties of metal-semiconductor systems involved in the nanowires growth. Here, we will show that many aspects of the growth mechanisms, such as the surface curvature of the solid phase (in the nano or micrometer range), in equilibrium with the liquid phase are extremely important. We calculate and construct all binary Au-Si phase diagrams corresponding to nanosystems. By choosing the S(V)LS process rather than the VLS process, wesucceeded in answering not only the origin of the driving force needed to trigger off the precipitation of solid nanowire but also the thorny question of the size limit of nanowires in relation with our specific growth conditionsShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :