160W InAlN/GaN HEMTs amplifier at 2 GHz ...
Type de document :
Communication dans un congrès avec actes
Titre :
160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management
Auteur(s) :
Piotrowicz, Stéphane [Auteur]
Thales Research and Technology [Palaiseau]
Jardel, Olivier [Auteur]
Thales Research and Technology [Palaiseau]
Jacquet, Jean-Claude [Auteur]
Thales Research and Technology [Palaiseau]
Lancereau, D. [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Morvan, Erwan [Auteur]
Thales Research and Technology [Palaiseau]
Sarazin, Nicolas [Auteur]
Thales Research and Technology [Palaiseau]
Dufraisse, Jérémy [Auteur]
Thales Research and Technology [Palaiseau]
Dua, Charu [Auteur]
Thales Research and Technology [Palaiseau]
Oualli, Mourad [Auteur]
Thales Research and Technology [Palaiseau]
Chartier, Eric [Auteur]
Thales Research and Technology [Palaiseau]
Di Forte-Poisson, Marie-Antoinette [Auteur]
Thales Research and Technology [Palaiseau]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delage, Sylvain Laurent [Auteur]
Thales Research and Technology [Palaiseau]
Thales Research and Technology [Palaiseau]
Jardel, Olivier [Auteur]
Thales Research and Technology [Palaiseau]
Jacquet, Jean-Claude [Auteur]
Thales Research and Technology [Palaiseau]
Lancereau, D. [Auteur]
Thales Research and Technology [Palaiseau]
Aubry, Raphaël [Auteur]
Thales Research and Technology [Palaiseau]
Morvan, Erwan [Auteur]
Thales Research and Technology [Palaiseau]
Sarazin, Nicolas [Auteur]
Thales Research and Technology [Palaiseau]
Dufraisse, Jérémy [Auteur]
Thales Research and Technology [Palaiseau]
Dua, Charu [Auteur]
Thales Research and Technology [Palaiseau]
Oualli, Mourad [Auteur]
Thales Research and Technology [Palaiseau]
Chartier, Eric [Auteur]
Thales Research and Technology [Palaiseau]
Di Forte-Poisson, Marie-Antoinette [Auteur]
Thales Research and Technology [Palaiseau]
Gaquiere, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delage, Sylvain Laurent [Auteur]
Thales Research and Technology [Palaiseau]
Titre de la manifestation scientifique :
34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
Ville :
La Jolla, CA
Pays :
Etats-Unis d'Amérique
Date de début de la manifestation scientifique :
2012-10-14
Titre de l’ouvrage :
Proceedings of 34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012
Date de publication :
2012
Mot(s)-clé(s) en anglais :
Gallium nitride
Power amplifiers
HEMTs
MODFETs
Power generation
Thermal resistance
Current measurement
Power amplifiers
HEMTs
MODFETs
Power generation
Thermal resistance
Current measurement
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with ...
Lire la suite >We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.Lire moins >
Lire la suite >We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power die. Thanks to an optimized thermal management, the amplifier allows us to reach an output power of 160W in pulse mode and 105W in CW. To our knowledge, these results represent the highest output powers ever reported for InAlN/GaN HEMT technology.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :