Organosilicon polymers deposition by PECVD ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Organosilicon polymers deposition by PECVD and RPECVD on micropatterned substrates
Auteur(s) :
Supiot, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vivien, Celine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Blary, Karine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rouessac, V. [Auteur]
Institut Européen des membranes [IEM]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vivien, Celine [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Blary, Karine [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rouessac, V. [Auteur]
Institut Européen des membranes [IEM]
Titre de la revue :
Chemical Vapor Deposition
Pagination :
321-326
Éditeur :
Wiley-VCH Verlag
Date de publication :
2011
ISSN :
0948-1907
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. ...
Lire la suite >Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2 µm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45 µm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processesLire moins >
Lire la suite >Thin films of organosilicon materials produced by plasma-assisted deposition are frequently used because of their multifunctional character, but few comparative studies into their growth on structured surfaces are available. Two types of CVD processes, plasma-enhanced (PE)CVD and remote plasma-enhanced (RPE)CVD are taken as typical operating conditions. Polymer films of thicknesses ranging from 0.25 to 1.2 µm are obtained by both processes from the tetramethylsiloxane (TMDSO) precursor, on silicon substrates microstructured with a set of patterns (trenches, holes, and columns) with various spacings, and with vertical dimensions of 1.3 or 1.45 µm. Analysis by scanning electron microscopy (SEM) of the samples is carried out after sample cleavage. The effects of pattern size and shape, defined by the aspect ratio parameter, on the local growth rate are studied more specifically for trenches for both PECVD and RPECVD processesLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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