Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Defay, Emmanuel; Ben Hassine, Nizar; Emery, Patrick; Parat, Guy; Abergel, Julie; Devos, Arnaud

Document type :

Article dans une revue scientifique: Article original

DOI :

10.1109/TUFFC.2011.2114

Title :

Tunability of aluminum nitride acoustic resonators: a phenomenological approach

Author(s) :

Defay, Emmanuel [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Ben Hassine, Nizar [Auteur]
Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés [TIMA]
Emery, Patrick [Auteur]
Parat, Guy [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Abergel, Julie [Auteur]
Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information [CEA-LETI]
Devos, Arnaud [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control

Pages :

2516-2520

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2011

ISSN :

0885-3010

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency ...
Show more >A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200 V. This indicates, based on these RF measurements versus dc bias and the model used, that the AlN stiffness variation versus dc bias is the prominent effect because both resonance and antiresonance experience a similar variation, respectively, 24 MHz and 19 MHz at 400 V. Picosecond ultrasonics were also used to prove independently that the acoustic velocity (and therefore AlN stiffness) is sensitive to dc bias and that the variation induced is comparable to that extracted from the resonance measurements. It turned out that the stiffness relative variation for an electric field of 1 V/μm extracted from picosecond ultrasonics is 54 ppm·μm/V. This is in good agreement with the value extracted from the RF measurements, namely 57.2 ppm·μm/V. The overall tunability of these AlN resonators reaches 1.1%, which is an interesting figure, although probably not high enough for genuine applications.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

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