Titre :

Evaluation of a gate capacitance in the sub-aF range for a chemical field-effect transistor with a silicon nanowire channel

Auteur(s) :

Clement, N. [Auteur]
Nishiguchi, K. [Auteur]
Fujiwara, A. [Auteur]
Vuillaume, D. [Auteur]

Titre de la revue :

IEEE Transactions on Nanotechnology

Pagination :

1172-1179

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

2011

ISSN :

1536-125X

Mot(s)-clé(s) en anglais :

Terms-Nanotechnology
Metrology
CHEMFETs
Nanowires

Discipline(s) HAL :

Physique [physics]

Résumé en anglais : [en]

An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of ...
Lire la suite >An evaluation of the gate capacitance of a fieldeffect transitor (FET) whose channel length and width are several ten nanometer, is a key point for sensors applications. However, experimental and precise evaluation of capacitance in the aF range or less has been extremely difficult. Here, we report an extraction of the capacitance down to 0.55 aF for a silicon FET with a nanoscale wire channel whose width and length are 15 and 50 nm, respectively. The extraction can be achieved by using a combination of four kinds of measurements: current characteristics modulated by double gates, random-telegraphsignal noise induced by trapping and detrapping of a single electron, dielectric polarization noise, and current characteristics showing Coulomb blockade at low temperature. The extraction of such a small gate capacitance enables us to evaluate electron mobility in a nanoscale wire using a classical model of current characteristics of a FETLire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Non spécifiée

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL