• English
    • français
  • Help
  •  | 
  • Contact
  •  | 
  • About
  •  | 
  • Login
  • HAL portal
  •  | 
  • Pages Pro
  • EN
  •  / 
  • FR
View Item 
  •   LillOA Home
  • Liste des unités
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
  • View Item
  •   LillOA Home
  • Liste des unités
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Coupling of excitons and defect states in ...
  • BibTeX
  • CSV
  • Excel
  • RIS

Document type :
Article dans une revue scientifique
DOI :
10.1103/PhysRevB.83.144115
Title :
Coupling of excitons and defect states in boron-nitride nanostructures
Author(s) :
Attaccalite, Claudio [Auteur]
Théorie de la Matière Condensée [NEEL - TMC]
Bockstedte, M. [Auteur]
Marini, A. [Auteur]
Rubio, A. [Auteur]
Wirtz, L. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pages :
144115
Publisher :
American Physical Society
Publication date :
2011-04-29
ISSN :
1098-0121
HAL domain(s) :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
English abstract : [en]
The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. ...
Show more >
The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect levels and extended states produce characteristic excitation bands that should be responsible for the emission band around 4 eV, observed in luminescence experiments. In addition, defect bound excitons occur that are consistently treated in our ab initio approach along with the "free" exciton. For defects in strong concentration, the co-existence of both bound and free excitons adds sub-structure to the main exciton peak and provides an explanation for the corresponding feature in cathodo and photo-luminescence spectra.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Comment :
in press on Phys. Rev. B
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
Files
Thumbnail
  • http://arxiv.org/pdf/1103.2628
  • Open access
  • Access the document
Thumbnail
  • https://hal.archives-ouvertes.fr/hal-00626222/document
  • Open access
  • Access the document
Thumbnail
  • https://hal.archives-ouvertes.fr/hal-00626222/document
  • Open access
  • Access the document
Thumbnail
  • document
  • Open access
  • Access the document
Thumbnail
  • 1103.2628.pdf
  • Open access
  • Access the document
Thumbnail
  • 1103.2628
  • Open access
  • Access the document
Université de Lille

Mentions légales
Université de Lille © 2017