Functionalization of silicon nanowires for ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
Functionalization of silicon nanowires for specific sensing
Author(s) :
Passi, V. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Celle, C. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN / CEA-DES]
Clavaguera, S. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN / CEA-DES]
Simonato, J.P. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN / CEA-DES]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Dubois, Emmanuel [Auteur]

Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Celle, C. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN / CEA-DES]
Clavaguera, S. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN / CEA-DES]
Simonato, J.P. [Auteur]
Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux [LITEN / CEA-DES]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Journal title :
ECS Transactions
Pages :
313-318
Publisher :
Electrochemical Society, Inc.
Publication date :
2011
ISSN :
1938-5862
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change ...
Show more >Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of a silicon nanowire as a compact transducer for direct detection of (bio)chemical molecules or gases has gained immense attention these last years. In this paper, fabrication of silicon nanowires using top-down approach is shown, with simple calculations to determine hole mobility, hole concentration and resistivity. Transfer characteristics and sampling measurements were performed on the nanowires with and without surface functionalization under various ambient conditions indicating the importance of functionalization in order to avoid any environment effect on the transport properties of the nanowiresShow less >
Show more >Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of a silicon nanowire as a compact transducer for direct detection of (bio)chemical molecules or gases has gained immense attention these last years. In this paper, fabrication of silicon nanowires using top-down approach is shown, with simple calculations to determine hole mobility, hole concentration and resistivity. Transfer characteristics and sampling measurements were performed on the nanowires with and without surface functionalization under various ambient conditions indicating the importance of functionalization in order to avoid any environment effect on the transport properties of the nanowiresShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :
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