Titre :

Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy

Auteur(s) :

Stolz, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cho, E. [Auteur]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Androussi, Yidir [Auteur]
Laboratoire de structures et propriétés de l'état solide - UMR 8008 [LSPES]
Troadec, David [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pavlidis, Dimitris [Auteur]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Applied Physics Letters

Pagination :

161903-1-3

Éditeur :

American Institute of Physics

Date de publication :

2011

ISSN :

0003-6951

Mot(s)-clé(s) en anglais :

III-V semiconductors
Refractive index
Optical waveguides
Optical properties
Prisms

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed ...
Lire la suite >The waveguideproperties are reported for wide bandgap gallium nitride(GaN) structures grown by metal organic vapor phase epitaxy on sapphire using a AlN/GaN short period-superlattice (SPS) buffer layer system. A detailed optical characterization of GaN structures has been performed using the prism coupling technique in order to evaluate its properties and, in particular, the refractive index dispersion and the propagation loss. In order to identify the structural defects in the samples, we performed transmission electron microscopy analysis. The results suggest that AlN/GaN SPS plays a role in acting as a barrier to the propagation of threading dislocations in the active GaN epilayer; above this defective region, the dislocations density is remarkably reduced. The waveguide losses were reduced to a value around 0.65dB/cm at 1.55μm, corresponding to the best value reported so far for a GaN-based waveguide.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL