Titre :

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

Auteur(s) :

Reckinger, N. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Tang, Xing [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, G. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Flandre, D. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Raskin, J.P. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Afzalian, A. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]

Titre de la revue :

Applied Physics Letters

Pagination :

1121021

Éditeur :

American Institute of Physics

Date de publication :

2011

ISSN :

0003-6951

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

Résumé en anglais : [en]

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for ...
Lire la suite >The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of current occurs at low temperature for short contact separations or dopant-segregated contacts when the voltage applied to the device is sufficiently high. From two-dimensional self-consistent nonequilibrium Green’s function simulations, the dependence of the Schottky barrier profile on the applied voltage, unaccounted for in usual thermionic-field emission models, is found to be the source of this deviationLire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL